una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 110/111rki series phase control thyristors stud version features high current and high surge ratings hermetic ceramic housing 110a typical applications dc motor controls controlled dc power supplies ac controllers major ratings and characteristics parameters t(av) @tc 't(rms) 'tsm i2t @50hz @60hz @50hz @60hz vdr?'vrrm ., lj nc. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 blocking parameter dv/dt maximum critical rate of rise of off-state voltage 'rrm max- pealt reuerse and off-state idrm leakage current 110/111rk1 500 20 units v/us ma conditions tj = tj max. linear to b0% rated vonm ' l =? tj ma*' rated vdhm'vrr* app|ie(1 triggering parameter pgm maximum peak gate power pg(av) maximum average gate power 'qm max. peak positive gate current +vom maximum peak positive gate voltage -vgm maximum peak negative gate voltage igt dc gate current required lo trigger vgt dc gate voltage required to trigger igd dc gate current not to trigger vgd dc gate voltage not to trigger 110/111rki 12 3.0 3.0 20 10 typ. 180 80 40 2.5 1.6 1 max. 120 2 6.0 0.25 units w a v ma v ma v conditions tj = tj max, i < 5ms tj - tj max, f = sohz, d% = 50 tj = tj max. t < 6ms t - t , max, t < 5ms j j p tj = - 40'c t = 25'c max. required gate trigger/ cur- tj = 14q'c renl/ voltage are the lowest value t =-40c which wih trigger all units 12v '' anode-to-cathode applied tj= 25'c tj = 140'c max. gate current/ voltage not to trigger is the max. value which tj = tj max win not trigger any unit with rated vdrm anode-to-cathode applied thermal and mechanical specification parameter tj max. operating temperature range t . max. storage temperature range rmjc max. thermal resistance, junction to case r([lcs max. thermal resistance, case to heatsink t mounting torque, 10% wt approximate weight case style 110/1 11rki -4010140 -4010160 0.27 0.1 15.5 (137) 14 (120) 130 units ?c k/w mm (ibf-in) g to-209ac(to-94) conditions dc operation mounting surface, smooth, flat and greased non lubricated threads lubricated threads see outline table quality semi-conductors
<$e.ml~(2on.auci o'i. , d na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 electrical specifications voltage ratings type number 110/111rki voltage code 40 80 120 vdrm^rw max- repetitive peak and off-state voltage v 400 800 1200 vrsm , maximum non- repetitive peak voltage v 500 900 1300 wrrm max- @ tj = tj max. ina 20 on-state conduction parameter 'tiavi max- auer39e on-state current @ case temperature 'tirusi max- rms on-sta'e current itsm max. peak, one-cycle non-repetitive surge current i2t maximum i2t for fusing !2vt maximum l2\/t for fusing vt(to)] low level value of threshold voltage vt(to)2 high level value of threshold voltage r(1 low level value of on-state slope resistance r|2 high level value of on-state slope resistance vtu max. on-state voltage ih maximum holding current il typical latching current 110/111rki 110 90 172 2080 2180 1750 1830 21.7 19.8 15.3 14.0 217 0.82 1.02 2.16 1.70 1.57 200 400 units a ?c a ka2s ka2\'s v msj v ma conditions 180* conduction, half sine wave dc @ 83"c case temperature t = 10ms no voltage t = 8.3ms reapplied t=10ms 100%vbru t = 8.3ms reapplied sinusoidal half wave, t * 1 qms no voltage initial tj = tj max. t - 8.3ms reapplied t=10ms 100%vrrm t = 8.3ms reapplied t = 0.1 to 10ms. no voltage reapplied (16.7% x i x it(av) < 1 < * x it(av)), tj = tj max. (l> nxl^jj^tj max. (16.7% x it x it(av) < i < n x it(av)), tj ^ tj max. (l^xl^.vtjma, i k= 350a, tj ~ tj max., 1 = 10ms sine pulse tj = 25'c, anode supply 6v resistive load switching parameter di/dt max. non-repetitive rate of nse of turned-an current td typical delay time t typical turn-off time 110/111rk1 300 1 110 units a/ms us conditions gate drive 20v, 20ft, tr 1 1js tj = tj max, anode voltage s 80% vdrm gate current 1a, di /dt = 1 a/ps vd = -87%vorm.v2s'c itm = 50a. tj = tj max., di/dt = -5a/us, vb = 50v dv/dt = 20v/m3, gate 0v 2sh quality semi-conductors
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